Electronic structure of rare-earth doped SrFBiS2 superconductors from photoemission spectroscopic studies

被引:1
|
作者
Mishra, P. [1 ]
Lohani, H. [1 ]
Jha, Rajveer [2 ]
Awana, V. P. S. [2 ]
Sekhar, B. R. [1 ]
机构
[1] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, Orissa, India
[2] CSIR, Natl Phys Lab, KS Krishnan Marg, New Delhi 110012, India
关键词
Photoemission and photoelectron spectra (74.78.Na); Noncuprate superconductors (74.70.Xa); Electronic structure (31.15.E-); BIS2-BASED COMPOUNDS; SINGLE-CRYSTALS; PSEUDOGAP; BI4O4S3; STATE;
D O I
10.1016/j.physc.2016.05.004
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structure study of the Rare Earth (La, Ce) doped SrFBiS2 superconductors using valence band photoemission in conjugation with the band structure calculations have been presented. The spectral features shift towards higher binding energy, consistent with the electron doping, for the doped compounds. An enhanced metallicity in addition to the shift in the Fermi level towards the conduction band occurs for the Rare Earth (RE) doped compounds. Further, the degeneracy of bands along X-M direction at valence band maximum (VBM) and conduction band minimum (CBM) is lifted due to RE doping. An enhanced spectral weight near E-F accompanied by a decrease in density of states at higher binding energy occurs for the doped compounds. This unusual spectral weight shift is substantiated by the change in Fermi surface topology and reduced distortion of Bi-S plane for the doped compounds. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:89 / 93
页数:5
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