Three-Dimensional Stacked Multilayer Graphene Interconnects

被引:34
|
作者
Yu, Tianhua [1 ]
Liang, Chen-Wei [1 ]
Kim, Changdong [1 ]
Song, Eui-Sang [1 ]
Yu, Bin [1 ]
机构
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
关键词
Contact resistivity; interconnect; sheet resistance; stacked multilayer graphene (s-MLG); LAYER GRAPHENE;
D O I
10.1109/LED.2011.2158385
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We experimentally demonstrate stacked multilayer graphene (MLG) (s-MLG) as a new material system for high-performance carbon interconnects. Electrical performance is systematically characterized. We discover that the wire sheet resistance of s-MLG decreases with more layers stacking and shows better conductivity than that of the exfoliated MLG sample with the same layer numbers. The contact resistance of the s-MLG samples was calculated and confirmed using two different methods. It is demonstrated that a decrease in the intrinsic resistivity of s-MLG with increasing layer number is discovered; however, contact resistance will be saturated with more stacked layer numbers.
引用
收藏
页码:1110 / 1112
页数:3
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