Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope

被引：0

作者：

Ohno, Y ^{[1
]}

Takeda, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical properties-of anti-phase boundaries (APBs) and Frenkel-pairs (FPs) in CuPt-ordered GaTnP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy: in a transmission electron microscope. We have found: 1) the decrease of the band gap energy E-g with decreasing the APE density and 2) three APE luminescence bands peaking at the photon energy of about E-g - 8, E-g - 18, and E-g - 30 meV, respectively. We have shown that the FPs on the Ga and In sublattices, generated by electron-irradiation, act as nonradiative recombination centers.

引用

页码：175 / 178

页数：4