Characterization of spin-orbit fields in InGaAs quantum wells

被引：11
|
作者：
Henn, T. [1 ]
Czornomaz, L. [1 ]
Salis, G. [1 ]
机构：
[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 15期
基金：
瑞士国家科学基金会;
关键词：
SEMICONDUCTORS; RELAXATION; HELIX;
D O I：
10.1063/1.4964764
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the spin-orbit interaction is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients a of 2 x 10(-12) eVm is estimated. Published by AIP Publishing.
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页数：4
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