Effect of impurity atmosphere on the electrical activity of dislocations in silicon

被引：0
|
作者：
Rzaev, SG [1 ]
机构：
[1] Azerbaijan Acad Sci, Abdullaev Inst Phys, Baku 370143, Azerbaijan
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 12期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of impurity atmosphere on the electrical behavior of an individual dislocation was studied by scanning and transmission electron microscopy techniques and selective chemical etching. The electrical activity of dislocations was found to be determined by their impurity atmosphere. The dislocations without impurity atmosphere show the highest activity, while impurities saturate dangling bonds, and the electrical activity of the dislocation drops. At high concentrations of impurity atoms around dislocations (>10(21) cm(-3) according to rough estimates), precipitates may form in the impurity atmosphere, resulting in microplasma discharge and a decrease of the breakdown voltage of the planar Si p-n junctions.
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页码：1191 / 1194
页数：4
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