Terahertz Generation (0.3-0.8THz) Achieved by Photomixer Based on Low-temperature Grown InGaAs Emitter

被引：0
|
作者：
Kim, J. O. [1 ]
Lee, S. J. [1 ]
Yee, D. S. [1 ]
Noh, S. K. [1 ]
Shin, J. H. [2 ]
Park, K. H. [2 ]
Park, D. W. [3 ]
Kim, Jin S. [3 ]
Kim, Jong S. [4 ]
机构：
[1] Korea Res Inst Stand & Sci, Nano Mat Evaluat Ctr, Taejon, South Korea
[2] Elect & Telecommun Res Inst, Photon Wireless Convergence Components Dept, Taejon, South Korea
[3] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju, South Korea
[4] Youngnam Univ, Dept Phys, Taegu, South Korea
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
Low-temperature-grown InGaAs; Carrier lifetime; Terahertz; Photomixer;
D O I：
10.1063/1.3666677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Continuous-wave (CW) terahertz (THz) generation has been successfully achieved by low-temperature grown (LTG) In1-xGaxAs (x=0.47) epitaxial layer as a THz emitter and a photomixer module with dual-wavelength laser as an optical beat source. The reflectance decay spectroscopy revealed a carrier lifetime of similar to 2.5 ps in LTG-InGaAs layer grown at 220 degrees C and subsequently in-situ annealed at 550 degrees C for 10 min. The THz ouput characteristics are demonstrated in the range of 0.3-0.8 THz.
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页数：2
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