Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

被引：15

作者：

Sakr, Salam ^{[1
]}

Kotsar, Yulia ^{[2
]}

Tchernycheva, Maria ^{[1
]}

Warde, Elias ^{[1
]}

Isac, Nathalie ^{[1
]}

Monroy, Eva ^{[2
]}

Julien, Francois H. ^{[1
]}

机构：

[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA, INAC NPSC SP2M, Equipe Mixte Nanophys & Semicond, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; INTERSUBBAND TRANSITION; DIODES; ABSORPTION; GAN;

D O I：

10.1143/APEX.5.052203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we have investigated the vertical electron transport through a seven-period GaN/AlN multiple-quantum-well structure. The devices show asymmetric current-voltage characteristics displaying negative differential resistance at room temperature. These features persist for multiple scans and are reproducible for both upward and downward sweeping voltages. We interpret the negative differential resistance as a consequence of the resonant tunneling between the fundamental and excited states of adjacent quantum wells. The experimental results are in good agreement with the predictions of an electron transport simulation. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

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