Rigorous electromagnetic simulation of EUV masks: influence of the absorber properties

被引：27
|
作者：
Schiavone, P
Granet, G
Robic, JY
机构：
[1] CEA, LETI, CNRS, EP 2073,Lab Technol Microelect, F-38054 Grenoble 9, France
[2] Univ Blaise Pascal Les Cezeaux, CNRS, URA 1793, Lab Sci Mat Elect & Automat, F-63177 Aubiere, France
[3] CEA, LETI, DMEL, STCI, F-38054 Grenoble 9, France
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷
关键词：
D O I：
10.1016/S0167-9317(01)00472-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the first application of the rigorous coupled wave analysis (RCWA) to EUV lithography. The Fourier modal method (also known as RCWA) is one of the simplest methods to deal with diffraction by gratings. It is used here to model the case of reflective EUV masks. We show the computation of the electromagnetic fields within and in the near vicinity of the multilayer EUV mask for periodic features in both TE and TM polarisation. The very time efficient method permits easy study of the influence of the different mask parameters and the influence of the main absorber properties. Material, thickness and profile of the absorber patterns are considered. Current status of the tool only considers 2D structures. By nature, the model is better suited to periodic features. (C) 2001 Elsevier Science BY All rights reserved.
引用
收藏
页码：497 / 503
页数：7
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