Analysis of the threshold current in nitride-based lasers

被引：8
|
作者：
Hangleiter, A
Heppel, S
Off, J
Kuhn, B
Scholz, F
Bader, S
Hahn, B
Härle, V
机构：
[1] Tech Univ Braunschweig, Inst Tech Phys, D-38106 Braunschweig, Germany
[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
[3] Osram Opto Semdicond, D-93049 Regensburg, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期
关键词：
nitrides; semiconducting III-V materials; laser diodes;
D O I：
10.1016/S0022-0248(01)01301-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Using optical gain measurements and calculated optical gain spectra we analyse the various contributions to the threshold current observed for laser diodes. Our model is based on band-to-band transitions and includes internal polarization fields as well as multiple quantum wells. Besides good agreement between experiment and theory, our model explains the characteristic dependence of the threshold current on emission wavelength and well number. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：522 / 526
页数：5
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