Electrostatic Stabilized InP Colloidal Quantum Dots with High Photoluminescence Efficiency

被引:13
|
作者
Mnoyan, Anush N. [1 ]
Kirakosyan, Artavazd Gh. [1 ]
Kim, Hyunki [1 ]
Jang, Ho Seong [2 ]
Jeon, Duk Young [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Seoul 136791, South Korea
关键词
NANOCRYSTALS;
D O I
10.1021/acs.langmuir.5b00847
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrostatically stabilized InP quantum. dots (QDs) showing a high luminescence yield of 16% without any long alkyl chain coordinating ligands on their surface are demonstrated: This is achieved by UV-etching the QDs in the presence of fluoric and sulfuric acids. Fluoric acid plays a critical role in selectively etching nonradiative sites during the ligand-exchange process and in relieving the acidity of the solution to prevent destruction of the QDs. Given that the InP QDs show high luminescence without any electrical barriers, such as long alkyl ligands or inorganic shells, this method can be applied for QD treatment for application to highly efficient QD-based optoelectronic devices.
引用
收藏
页码:7117 / 7121
页数:5
相关论文
共 50 条
  • [1] Excitation energy dependent efficiency of charge carrier relaxation and photoluminescence in colloidal InP quantum dots
    Ellingson, RJ
    Blackburn, JL
    Yu, PR
    Rumbles, G
    Micic, OI
    Nozik, AJ
    JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (32): : 7758 - 7765
  • [2] Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature
    BT Labs, Martlesham Heath, Ipswich, Suffolk, IPS 3RE, United Kingdom
    不详
    不详
    Appl Phys Lett, 12 (1694-1696):
  • [3] Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature
    Kershaw, SV
    Burt, M
    Harrison, M
    Rogach, A
    Weller, H
    Eychmüller, A
    APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1694 - 1696
  • [4] Anomalies in the linear absorption, transient absorption, photoluminescence and photoluminescence excitation spectroscopies of colloidal InP quantum dots
    Rumbles, G
    Selmarten, DC
    Ellingson, RJ
    Blackburn, JL
    Yu, PR
    Smith, BB
    Micic, OI
    Nozik, AJ
    JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2001, 142 (2-3) : 187 - 195
  • [5] Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots
    Ung Thi Dieu Thuy
    Pham Thi Thuy
    Nguyen Quang Liem
    Li, Liang
    Reiss, Peter
    APPLIED PHYSICS LETTERS, 2010, 96 (07)
  • [6] Temperature stabilized 1.55 μm photoluminescence in InAs quantum dots grown on InAlGaAs/InP
    Zhang, ZH
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1508 - 1511
  • [7] Colloidal Quantum Dots: 4. Colloidal Quantum Dots and Basic Photoluminescence Laws
    Razumov, V. F.
    Tovstun, S. A.
    HIGH ENERGY CHEMISTRY, 2024, 58 (SUPPL 1) : S39 - S53
  • [8] Light quenching of photoluminescence in hybrid films of InP/InAsP/InP nanowires and CdSe/ZnS colloidal quantum dots
    Khrebtov, A., I
    Kulagina, A. S.
    Dragunova, A. S.
    Reznik, R. R.
    Cirlin, G. E.
    Danilov, V. V.
    OPTICAL MATERIALS, 2022, 127
  • [9] Photoluminescence polarization of single InP quantum dots
    Zwiller, V
    Jarlskog, L
    Pistol, ME
    Pryor, C
    Castrillo, P
    Seifert, W
    Samuelson, L
    PHYSICAL REVIEW B, 2001, 63 (23):
  • [10] Photoluminescence characterization of InGaAs/InP quantum dots
    Gu, S.Q.
    Reuter, E.
    Xu, Q.
    Panepucci, R.
    Chen, A.C.
    Chang, H.
    Adesida, Ilesanmi
    Cheng, K.Y.
    Bishop, Stephen G.
    Caneau, C.
    Bhat, R.
    Proceedings of SPIE - The International Society for Optical Engineering, 1994, 2364 : 406 - 411