Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

被引：0
|
作者：
Zhao, F [1 ]
Choi, IW [1 ]
Hing, P [1 ]
Yuan, S [1 ]
Ong, TK [1 ]
Ooi, BS [1 ]
Jiang, J [1 ]
Chan, MCY [1 ]
Surya, C [1 ]
Li, EH [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Engn, Singapore 2263, Singapore
来源：
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：710 / 711
页数：2
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