Split-CV for pseudo-MOSFET characterization: experimental setups and associated parameter extraction methods

被引:0
|
作者
Pirro, L. [1 ]
Ionica, I. [1 ]
Ghibaudo, G. [1 ]
Cristoloveanu, S. [1 ]
机构
[1] IMEP LAHC, Grenoble, France
关键词
SOI; pseudo-MOSFET; mobility extraction; split-CV; probe effects; BARE SOI WAFERS;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
We examine in detail the experimental setup for fast, in situ characterization of bare SOI substrates using the pseudo-MOSFET technique. Two main experimental conditions are analyzed: the back contact between the SOI wafer and the metal chuck, and the influence of probes placement (location and pressure) on the die surface. Static I-V and split-CV measurements are reported and the parameter extraction methods are update. We focus on the carrier mobility and define pragmatic guidelines for simple and accurate extraction.
引用
收藏
页码:14 / 19
页数:6
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