Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals

被引：2
|
作者：
Tagiev, O. B. [1 ,2 ]
Ganbarova, Kh B. [1 ]
机构：
[1] Natl Acad Sci Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan
[2] Moscow MV Lomonosov State Univ, Baku Branch, AZ-1143 Baku, Azerbaijan
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 04期
关键词：
LUMINESCENCE;
D O I：
10.1134/S1063782615040247
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoluminescence of Ga2S3 crystals activated with Eu2+ and Tb3+ ions separately and with ions of both types is studied in the temperature range 77-300 K. It is established that, in the range 77-300 K, the observed broadband photoluminescence in (Ga2S3)(0.95):(Eu2O3)(0.05) crystals with a peak at 545 nm is defined by 4f (6)5d-4f (7)((8) S (7/2)) intracenter transitions in Eu2+ ions and the photoluminescence with peaks at 492, 544, 584, 625, and 680 nm in (Ga2S3)(0.99)(Tb2O3)(0.01) crystals is due to the 5d -> (2) F (j) (j = 6-2) intracenter transitions in Tb3+ ions. It is shown that the photoluminescence bands of Tb3+ ions in the (Ga2S3)(0.94)(Eu2O3)(0.05)(Tb2O3)(0.01) crystals disappears because of excitation energy transfer from Tb3+ ions to Eu2+ ions; i.e., the Tb3+ ion is a sensitizer of the photoluminescence of the Eu2+ ion.
引用
收藏
页码：448 / 451
页数：4
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