Semi-insulating CdTe with a minimum deep level doping

被引：5
|
作者：
Grill, R [1 ]
Franc, J [1 ]
Turkevych, I [1 ]
Höschl, P [1 ]
Belas, E [1 ]
Moravec, P [1 ]
机构：
[1] Charles Univ, Inst Phys, CR-12116 Prague, Czech Republic
来源：
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 5 | 2005年 / 2卷 / 05期
关键词：
D O I：
10.1002/pssc.200460830
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Quasichemical formalism is used to study self-compensation and reactions of point defects during annealing and successive cooling with aim to find a technique to prepare semi-insulating CdTe (SICT) with minimized deep level doping. We present a theoretical model which provides SICT also in 7N or less purity material with deep level density below the limit 10(13) cm(-3) which is demanded for detector grade CdTe. The principle of the method is based on a proper thermal treatment with the low temperature dwell and the defect reaction between shallow acceptor Cd vacancies and shallow donor Te antisite. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1489 / 1494
页数：6
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