Novel ferroelectric epitaxial (Ba,Sr)TiO3 capacitor for deep sub-micron memory applications

被引：11
|
作者：
Kawakubo, T
Abe, K
Komatsu, S
Sano, K
Yanase, N
Mochizuki, H
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554076
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO3 (BST) heteroepitaxial technique on Si substrate. Strong ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BST capacitor showed strong ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
引用
收藏
页码：695 / 698
页数：4
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