Modal Analysis of Silicon Photonic Waveguides at Mid-IR Wavelengths

被引：0
|
作者：
Manish [1 ]
Sumanth, Veerapuram [1 ]
Chanu, Soibam Aruna [1 ]
Sonkar, Ramesh Kumar [1 ]
机构：
[1] Indian Inst Technol Guwahati, Dept Elect & Elect Engn, Gauhati 781039, Assam, India
来源：
2019 WORKSHOP ON RECENT ADVANCES IN PHOTONICS (WRAP) | 2019年
关键词：
Mid-infrared; mode confinement; nitride; rib waveguide; sapphire; scattering loss; silicon;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper presents the modal characteristics of silicon-on-sapphire (SOS) and silicon-on-nitride (SON) rib waveguides at mid-IR wavelengths (3-5 mu m). The multimode to single mode transition for different waveguide widths has been determined numerically at different wavelengths. The Payne-Lacey (P-L) model has been used to calculate the scattering loss. It has been observed that lower scattering loss is obtained for larger rib widths at lower wavelengths and smaller rib width at larger wavelengths. SOS waveguides have better mode confinement and lower scattering loss than SON waveguides.
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页数：3
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