A novel method of fabricating porous silicon

被引：11
|
作者：
Chakravarty, Dibyendu [1 ]
Sarada, B. V. [1 ]
Chandrasekhar, S. B. [1 ]
Saravanan, K. [2 ]
Rao, T. N. [1 ]
机构：
[1] Int Adv Res Ctr Powder Met & New Mat ARCI, Hyderabad 500005, Andhra Pradesh, India
[2] Indira Gandhi Ctr Adv Res, Mat Res Grp, Kalpakkam 603102, Tamil Nadu, India
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2011年 / 528卷 / 25-26期
关键词：
X-ray diffraction; Porous materials; Sintering; Grain growth; Powder metallurgy; LUMINESCENCE;
D O I：
10.1016/j.msea.2011.07.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Porous silicon was fabricated using the spark plasma sintering technique. High porosity similar to 10-50% and strength similar to 50-60 MPa was obtained by tailoring the SPS variables. XRD and Raman investigations showed presence of pure silicon and exhibition of photoluminescence under visible light at wavelength similar to 520 nm confirmed the presence of porous silicon. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：7831 / 7834
页数：4
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