Optical Properties of Solution Phase Deposited (As2S3)100-xGex Chalcogenide Thin Films

被引:0
|
作者
Prince [1 ]
Raman, Swati [1 ]
Ganaie, Mohsin [1 ]
Husain, M. [1 ]
Zulfequar, M. [1 ]
机构
[1] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
来源
关键词
Chalcogenide glass; Solution; Spin-coating; Thin film; Photonic Devices;
D O I
10.1063/1.4980448
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Solution phase driven deposition methods such as casting or micro-molding are not much explored in amorphous chalcogenide glasses for Infrared (IR) optical component fabrication, which could be a simple and low cost alternative unlike conventional thin film deposition techniques such as vapor phase deposition methods. To use such deposition technique optimization of solution preparation conditions in order to retain the optical properties of the solute is the key factor. In this present study, we report on the dissolution kinematics of (As2S3)(100-x)Ge-x (x=0, 20, 40) glasses in ethylenediamine solvent. Dynamic Light Scattering (DLS) result indicates particle size of the solution is <30nm, which is an essential requirement for the fabrication of low surface roughness films in these materials. Optical properties of the solution are discussed.
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页数:3
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