Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

被引：10
|
作者：
Suzuki, Tomoyuki [1 ]
Wakabayashi, Hitoshi [1 ]
Tsutsui, Kazuo [2 ]
Iwai, Hiroshi [2 ]
Kakushima, Kuniyuki [1 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期
关键词：
Breakdown voltage; high-temperature annealing; ideality factor; interface reaction; Mo carbide; reverse leakage current; Schottky barrier diode; silicon carbide; SI;
D O I：
10.1109/LED.2016.2536738
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of SiC Schottky barrier diodes with laminated Mo/C electrodes having a Mo and C atom composition ratio of 2: 1 have been investigated. High thermal stability against annealing up to a temperature of 1050 degrees C has been found as a diode characteristic. The almost identical values of Schottky barrier height for the electrons (Phi(Bn)) obtained in several measurements with the ideality factors of below 1.10 indicate the formation of an ideal Schottky contact with 4H-SiC substrates.
引用
收藏
页码：618 / 620
页数：3
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