Polysilicon quantization effects on the electrical properties of MOS transistors (vol 47, pg 2266, 2000.)

被引：0
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作者：
Spinelli, AS [1 ]
Pacelli, A
Lacaita, AL
机构：
[1] Univ Insubria, Como, Italy
[2] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：609 / 609
页数：1
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