Electroluminescent devices based on polycrystalline silicon films for large-area applications

被引：0

作者：

Koshida, N ^{[1
]}

Takizawa, E ^{[1
]}

Mizuno, H ^{[1
]}

Arai, S ^{[1
]}

Koyama, H ^{[1
]}

Sameshima, T ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Div Elect & Informat Engn, Koganei, Tokyo 184, Japan

来源：

MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS | 1998年 / 486卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that porous polycrystalline Si (PPS) diodes operate as light-emitting diodes (LEDs) with efficiencies comparable to conventional porous silicon (PS) diodes fabricated on single-crystalline substrates. Judging from the electroluminescence (EL) characteristics such as emission spectra, diode current dependence of EL intensity, and its temperature dependence, the common EL mechanism seems to exist in PPS and PS diodes. Observed similarity in the photoluminescence (PL) properties between PPS and PS is consistent with this hypothesis. The capability of a poly-Si thin film transistor as a driver of PPS-LED is also demonstrated.

引用

页码：151 / 156

页数：6

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