Room temperature performance of InAs-GaAs quantum dot laser emitting at 1.3 μm

Quantum dot (QD) lasers are playing an important role in high-speed optical communications and high-temperature sensing applications due to stable operation at high temperature. We propose here performance analysis of QD laser fabricated using standard photolithography and wet etch process. An InAs-GaAs quantum dot laser is fabricated and characterized for 0.948 V operating potential developed across the device and light-current characteristics exhibiting threshold current density (J(th)) of 56 A/cm(2) per QD layer in both pulse and CW mode of operation. The slope efficiency of - 0.182 mW/A is measured in pulse mode. The optical power ranges up to 63 mW in pulse mode and 45 mW in CW operation at 800 mA. An analysis has been carried to estimate the threshold at different temperature exploiting quasi-Fermi levels and distribution of current density over the QD layers and confinement layers.