Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu2O3 buffer layers using pulsed laser deposition were investigated in detail by quantum interference and weak localization theories under magnetic fields up to 10 T. The dephasing length follows the temperature dependence with an index p approximate to 1.6 at higher temperatures indicating electron-electron interaction, yet becomes saturated at lower temperatures. Consistent with photoluminescence measurements and the multi-band simulation of the electron concentration, such behavior was associated with the dislocation densities obtained from x-ray diffraction and mobility fittings, where charged edge dislocations acting as inelastic Coulomb scattering centers were affirmed responsible for electron dephasing. Owing to the temperature independence of the dislocation density, the phosphorus-doped ZnO film maintained a Hall mobility of 4.5 cm(2) V-1 s(-1) at 4 K.