First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces

被引:1
|
作者
Saha, Dipankar [1 ,2 ]
Lodha, Saurabh [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[2] Indian Inst Engn Sci & Technol Shibpur, Dept Elect & Telecommun Engn, Howrah 711103, India
关键词
PHOTODETECTORS; GRAPHENE;
D O I
10.1038/s41598-021-02704-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Electronic transmission in monolayer ReS2 and ReS2 based van der Waals (vdW) heterointerfaces are studied here. Since ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterostructures are suitable for near infrared (NIR)/short-wave infrared (SWIR) photodetection, the role of interlayer coupling at the heterointerfaces is examined in this work. Besides, a detailed theoretical study is presented employing density functional theory (DFT) and nonequilibrium Green's function (NEGF) combination to analyse the transmission spectra of the two-port devices with ReS2/WSe2 and ReS2/MoSe2 channels and compare the near-equilibrium conductance values. Single layer distorted 1T ReS2 exhibits formation of parallel chains of 'Re'-'Re' bonds, leading to in-plane anisotropy. Owing to this structural anisotropy, the charge carrier transport is very much orientation dependent in ReS2 . Therefore, this work is further extended to investigate the role of clusterized 'Re' atoms in electronic transmission.
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页数:10
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