Coexistence of piezoelectricity and magnetism in two-dimensional vanadium dichalcogenides

被引:84
|
作者
Yang, Jianhui [1 ,2 ]
Wang, Anping [1 ]
Zhang, Shaozheng [1 ]
Liu, Jia [1 ]
Zhong, Zhicheng [2 ,3 ]
Chen, Liang [2 ]
机构
[1] Quzhou Univ, Quzhou 324000, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; TOTAL-ENERGY CALCULATIONS; SE; FERROMAGNETISM; MONOLAYER;
D O I
10.1039/c8cp06535g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Akin to three dimensional (3D) multiferroics, two dimensional (2D) piezoelectric materials with intrinsic magnetic properties are promising applications in nanoscale spintronic devices. In this study, 2D magnetic transition metal dichalcogenides (VS2, VSe2, and Janus-VSSe) have been investigated by the first principles method for their structural, magnetic, electronic, and piezoelectric properties. H type Janus-VSSe has been shown to be more stable than the T type, and dynamically stable through phonon frequency analysis. Our calculations show that H type Janus-VSSe is not only a magnetic semiconductor but also exhibits appreciable in-plane and vertical piezoelectricity. Additionally, H type VS2 and VSe2 also show high in-plane piezoelectricity. The calculated values of in-plane piezoelectricity for these magnetic materials are higher than traditional 3D piezoelectric materials such as -quartz. The coexistence of magnetism and piezoelectricity in H type VS2, Janus-VSSe, and VSe2 makes them promising piezoelectric materials in nanoscale spin devices.
引用
收藏
页码:132 / 136
页数:5
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