Spin-dependent current transmission across a ferromagnet-insulator-two-dimensional electron gas junction

被引：44
|
作者：
Hammar, PR [1 ]
Johnson, M [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期
关键词：
D O I：
10.1063/1.1408270
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The importance of using a low-transmission tunnel barrier for electrical spin injection from a ferromagnetic metal to a semiconductor is experimentally tested. A set of ferromagnet-insulator-two-dimensional electron-gas device stuctures is fabricated. Spin-dependent transport is measured in both diode and potentiometric geometries. Results are compared for devices with junction resistances that vary by an order of magnitude. The spin polarization of the junction current is about 40% for high-resistance barriers, with little temperature dependence over the range 4 K < T < 295 K.
引用
收藏
页码：2591 / 2593
页数：3
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