Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor

被引：6
|
作者：
Lin, YS [1 ]
机构：
[1] So Taiwan Univ Technol, Dept Elect Engn, Yung Kang, Tainan County, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期
关键词：
D O I：
10.1063/1.1637147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This investigation proposes an InP/InGaAs composite-collector double heterojunction bipolar transistor (CC-DHBT) grown by metalorganic chemical vapor deposition. The improved structure exhibits the advantages of no knee-shaped characteristics, no switching effect, low output conductance, a high two-terminal base-collector breakdown voltage (BV) that exceeds 20 V, and high three-terminal breakdown voltages (BVCEO>15 V, BVCBO>20 V). The current gain is over unity at ultralow collector current density of 10(-4) A/cm(2). These characteristics are attributed to the optimized collector design. Furthermore, this study elucidates complex breakdown mechanisms in the CC-DHBTs. (C) 2003 American Institute of Physics.
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收藏
页码：5545 / 5547
页数：3
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