In situ transmission electron microscopy study on the crystallization of GeTe binary alloy

被引：4
|
作者：
Kim, Eun Tae [1 ]
Lee, Jeong Yong [1 ]
Kim, Yong Tae [2 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期
关键词：
D O I：
10.1063/1.2919048
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microstructural properties of GeTe thin films were investigated by an in situ heating method within a high voltage electron microscope (HVEM). The results confirm that the transformation from an amorphous state to a fcc crystalline state yields a GeTe binary alloy with a ring-shaped amorphous structure. The fcc structured GeTe transforms into a GeTe orthorhombic structure during the experiment. The crystallization behavior of the GeTe orthorhombic structure in the HVEM is quite different from thermal crystallization. Our observation of real-time structural change confirms that the relaxed amorphous structure participates in the crystallization process in the electron beam irradiation condition. (C) 2008 American Institute of Physics.
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页数：3
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