The Quantum Hall Effect under high fields

被引:0
|
作者
Tiryaki, H [1 ]
Okamura, Y [1 ]
Fujita, S [1 ]
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
来源
关键词
Quantum Hall Effect; critical temperature; energy gap; bonding; phonon exchange;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experiments indicate that (a) the Quantum Hall Effect (QHE) is temperature-dependent, and (b) the QHE state is more stable at the Landau level occupation number v = 1/3 than at v = 1. These behaviors are explained based on the electron-fluxon (flux quantum) model in which an electron and fluxons axe bound by the phonon exchange.
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页码:85 / 88
页数:4
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