Developments in materials for 157nm photoresists

被引：0
|
作者：
Conley, W
Dean, K
Miller, D
Rich, G
Graffenberg, V
Patel, S
Lin, SH
Jamieson, A
Hung, R
Yamada, S
Pinnow, M
MacDonald, S
Chambers, C
Osborne, B
Patterson, K
Somervell, M
Trinque, B
Tran, HV
Cho, S
Chiba, T
Byers, J
Tomas, B
Shafer, G
DesMarteau, D
Klopp, J
Frechet, J
Sanders, D
Grubbs, R
Ober, C
Körner, H
Willson, CG
机构：
来源：
SOLID STATE TECHNOLOGY | 2001年 / 44卷 / 10期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Within the past year, the extension of optical lithography to 157nm has received widespread support because it offers the prospect of improved resolution based on decades of optical lithography experience. This article provides an update on the progress in 157nm, from photoresists to pellicles and exposure tools.
引用
收藏
页码：63 / +
页数：4
相关论文
共 50 条
  • [1] The challenges in materials design for 157nm photoresists
    Patterson, K
    Somervell, M
    Willson, CG
    [J]. SOLID STATE TECHNOLOGY, 2000, 43 (03) : 41 - +
  • [2] Parameter extraction for 157nm photoresists
    Bendik, J
    Conley, W
    Miller, D
    Zimmerman, P
    Dean, K
    Petersen, J
    Byers, J
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 988 - 996
  • [3] Novel fluoro copolymers for 157nm photoresists - A progress report
    Hohle, C
    Hien, S
    Eschbaumer, C
    Rottstegge, J
    Sebald, M
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 41 - 50
  • [4] Effect of airborne molecular contamination on 157nm photoresists.
    Dean, KR
    Meute, J
    Rich, G
    Turnquest, K
    Patel, S
    Graffenberg, V
    Rodriguez, M
    Gidley, D
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 228 : U427 - U427
  • [5] Synthesis of novel fluoropolymer for 157nm photoresists by cyclo-polymerization
    Kodama, S
    Kaneko, I
    Takebe, Y
    Okada, S
    Kawaguchi, T
    Shida, N
    Ishikawa, S
    Toriumi, M
    Itani, T
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 76 - 83
  • [6] The design of resist materials for 157nm lithography
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Chiba, T
    Zimmerman, P
    Miller, D
    Conley, W
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (04) : 583 - 590
  • [7] Challenges in materials design for 157 nm photoresists
    Patterson, Kyle
    Somervell, Mark
    Willson, C. Grant
    [J]. Solid State Technology, 2000, 43 (03) : 43 - 44
  • [8] The 157nm bet
    Levenson, M.D.
    [J]. Microlithography World, 2003, 12 (04):
  • [9] Investigation of hardmask/BARC materials for 157nm lithography
    Kim, WD
    Miller, DA
    Kim, HS
    Byers, JD
    Daniels, M
    Birmingham, B
    Tompkins, J
    [J]. MICROLITHOGRAPHIC TECHNIQUES IN INTEGRATED CIRCUIT FABRICATION II, 2000, 4226 : 93 - 106
  • [10] Design and study of resist materials for 157nm lithography
    Yamada, S
    Cho, S
    Zampini, A
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 569 - 579
12345