Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

被引：40
|
作者：
Gao, J. R.
Hajenius, M.
Tichelaar, F. D.
Klapwijk, T. M.
Voronov, B.
Grishin, E.
Gol'tsman, G.
Zorman, C. A.
Mehregany, M.
机构：
[1] SRON, Netherlands Inst Space Res, NL-3584 CA Utrecht, Netherlands
[2] Delft Univ Technol, Fac Appl Phys, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[3] Moscow State Pedag Univ, Dept Phys, Moscow 119435, Russia
[4] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2766963
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800 degrees C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
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页数：3
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