Silicon refractive optics for hard X-rays

被引:0
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作者
Aristov, V [1 ]
Firsov, A [1 ]
Grigoriev, A [1 ]
Ishikawa, T [1 ]
Kikuta, S [1 ]
Kohmura, Y [1 ]
Kuznetsov, S [1 ]
Shabelnikov, L [1 ]
Yunkin, V [1 ]
机构
[1] RAS, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
X-rays refractive optics has made a real success in a hard radiation domain promising for many applications. An analysis made of refractive materials properties, which are most suitable for this new kind of X-ray focusing optics shows that in silicon refraction effects prevail on attenuation. A wide variety of technologies dedicated to microstructure formation on Si make it as a most suitable one. Using electron beam lithography and deep plasma etching planar parabolic profiles are produced with the focal distance 1 m on 17.4 keV radiation. They are tested on synchrotron radiation at beamline X47 SRPING-8. Experiments carried out open the way to construct kinoform refracting profiles, which exceed simple parabolas in gain and aperture. A number of kinoform profiles on silicon is created for energies up to 50 keV, which at apertures 2mm have calculated gain up to 5000. Some focusing properties of such planar refracting profiles are discussed.
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页码:558 / 561
页数:4
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