Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

被引：1

作者：

Subacius, L. ^{[1
]}

Venckevicius, R. ^{[1
]}

Kasalynas, I. ^{[1
]}

Seliuta, D. ^{[1
]}

Valusis, G. ^{[1
]}

Schmidt, J. ^{[2
]}

Lisauskas, A. ^{[2
]}

Roskos, H. G. ^{[2
]}

Alekseev, K. ^{[3
]}

Koehler, K. ^{[4
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Goethe Univ Frankfurt, Inst Phys, D-6000 Frankfurt, Germany

[3] Lougborough Univ, Dept Phys, Lougborough LE11 3TU, England

[4] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

ACTA PHYSICA POLONICA A | 2011年 / 119卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.119.167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/A(10.3)Ga(0.7)As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.

引用

页码：167 / 169

页数：3

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