A comparison of shielded and conventional on-wafer test-fixture forward coupling on silicon-on-insulator (SOI) substrate

被引：1

作者：

Kaija, T ^{[1
]}

Ristolainen, EO ^{[1
]}

机构：

[1] Tampere Univ Technol, Inst Elect, FIN-33101 Tampere, Finland

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2005年 / 45卷 / 01期

关键词：

crosstalk; microwave measurements; modeling; semiconductor device measurements; silicon on insulator technology;

D O I：

10.1002/mop.20727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, ground-shielded and conventional on-wafer test-fixture properties on a silicon-on-insulator (SOI) substrate are studied in microwave measurements. The ground-shielded fixture exhibits over 60% lower forward-coupling than the corresponding conventional fixture. Reduced forward-coupling improves the test-fixture scalability. Shielded in-fixtures provide the correct parasitics needed for successful de-embedding. This is validated by measurements. (c) 2005 Wiley Periodicals, Inc.

引用

页码：70 / 75

页数：6

共 3 条

[1] Impact of test-fixture forward coupling on on-wafer silicon device measurements
Kolding, TE
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (02): : 73 - 74
[2] Ultrathin Silicon-on-Insulator (SOI) wafer for compliant substrate
Noh, Shinyoung
Ho-Baillie, Anita
Bremner, Stephen
Green, Martin A.
Hao, Xiaojing
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 858 - 860
[3] A modified shield-based test fixture for Silicon-On-Insulator (SOI) to mitigate the uncertainties of the parallel parasitics
Kaija, T
Ristolainen, EO
22ND NORCHIP CONFERENCE, PROCEEDINGS, 2004, : 119 - 122

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