Comparative study of hot-wire chemical vapor deposition onto (100) Si near 600°C:: Epitaxial and polycrystalline silicon films

被引：0

作者：

Teplin, Charles W. ^{[1
]}

Branz, Howard M. ^{[1
]}

Jones, Kim M. ^{[1
]}

To, Bobby ^{[1
]}

Iwaniczko, Eugene ^{[1
]}

Stradins, Paul ^{[1
]}

机构：

[1] NCPV NREL, Golden, CO 80401 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Previously, we reported improved silicon epitaxy by hot-wire chemical vapor deposition (HWCVD) between about 600 and 650 degrees C. Such temperatures are compatible with the thickening of large-grained Si seed layers on borosilicate glasses or other inexpensive substrates. Here, we provide detailed real-time spectroscopic ellipsometry (RTSE) and x-ray diffraction (XRD) analysis of two films grown near 600 degrees C. A film grown at 594 degrees C shows breakdown to a polycrystalline phase, while a film grown at 627 degrees C is entirely epitaxial. Transmission electron microscopy (TEM) of this epitaxial film shows dislocation defects that originate at the substrate/film interface, suggesting that an optimized surface preparation could yield lower defect densities.

引用

页码：121 / 125

页数：5

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