Board-Level Ku-Band Power Amplifier: Design and Challenges

被引:0
|
作者
Singhal, Hemant Kumar [1 ,2 ]
Rawat, Karun [1 ]
机构
[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee, Uttarakhand, India
[2] Natl Inst Technol, Dept Elect & Commun, Srinagar, Uttarakhand, India
关键词
Challenges; GaN HEMT; Ku-band; Microwave circuit; Power amplifier;
D O I
10.1080/03772063.2020.1742804
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the challenges in the design of board-level Ku-band power amplifier (PA) using the hybrid-MIC technology. The selection of laminates, connectors, cables and RF components, such as DC feed and DC block, is examined from the perspective of Ku-band PA designers. Other key challenges, such as die mounting and wire bonding, are also discussed. Die mounting and wire bonding are critical phenomena and they have a great impact on the working of PA at high frequencies. After several trials, successful die mounting has been achieved and a methodology for reliable die mounting and wire bonding has been proposed. With the help of investigation done for the design of PA at the high operating frequency, a first board-level power amplifier at 17 GHz has been designed using a 250 nm bare die device with a 400 MHz frequency band.
引用
收藏
页码:3001 / 3009
页数:9
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