Structural stability and Raman scattering of InN nanowires under high pressure

被引：13
|
作者：
Yao, L. D. [1 ]
Luo, S. D. [1 ]
Shen, X. [1 ]
You, S. J. [1 ]
Yang, L. X. [1 ]
Zhang, S. J. [1 ]
Jiang, S. [2 ]
Li, Y. C. [2 ]
Liu, J. [2 ]
Zhu, K. [1 ]
Liu, Y. L. [1 ]
Zhou, W. Y. [1 ]
Chen, L. C. [1 ]
Jin, C. Q. [1 ]
Yu, R. C. [1 ]
Xie, S. S. [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
来源：
JOURNAL OF MATERIALS RESEARCH | 2010年 / 25卷 / 12期
基金：
中国国家自然科学基金;
关键词：
LIGHT-EMITTING DEVICES; INDIUM NITRIDE; ELECTRON-TRANSPORT; LASER-DIODES; GROWTH; GAN;
D O I：
10.1557/JMR.2010.0290
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31 8 GPa The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14 6 GPa, which is slightly higher than the transition pressure of InN bulk materials (similar to 12 1 GPa) The relative volume reduction at the transition point is close to 17 88%, and the bulk modulus B-0 is determined through fitting the relative volume-pressure experimental data related to the wurtzite and rocksalt phases to the Birch-Murnaghan equation of states Moreover, high-pressure Raman scattering for InN nanowires were also investigated in DAC at room temperature The corresponding structural transition was confirmed by assignment of phonon modes We calculated the mode Gruneisen parameters for the wurtzite and rocksalt phases of InN nanowires
引用
收藏
页码：2330 / 2335
页数：6
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