Synthetic Properties of the c-axis Tilted AlN Thin Films

被引：1
|
作者：
Chung, Chung-Jen [1 ]
Wei, Ching-Liang [2 ]
Hsieh, Po-Tsung [1 ]
Huang, Chao-Yu [3 ]
Lin, Jen-Fin [1 ]
Chen, Ying-Chung [2 ]
Cheng, Chien-Chuan [4 ]
机构：
[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
[3] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 701, Taiwan
[4] De Lin Inst Technol, Dept Elect Engn, New Taipei, Taiwan
来源：
PRICM 7, PTS 1-3 | 2010年 / 654-656卷
关键词：
Aluminum nitride; nano-indentation; raman shift;
D O I：
10.4028/www.scientific.net/MSF.654-656.1780
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.
引用
收藏
页码：1780 / +
页数：2
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