Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices

被引：2

作者：

Naito, Takahiro ^{[1
]}

Yamada, Michihiro ^{[2
]}

Yamada, Shinya ^{[1
,2
]}

Kanashima, Takeshi ^{[1
]}

Sawano, Kentarou ^{[3
]}

Hamaya, Kohei ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, Toyonaka, Osaka 5608531, Japan

[3] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 113卷

关键词：

SiGe; Spintronics; Local magnetoresistance; Inverse MR; ELECTRICAL DETECTION; TRANSPORT;

D O I：

10.1016/j.mssp.2020.105046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We find relatively large inverse local two-terminal magnetoresistance (MR) effect in ferromagnet (FM)/semi-conductor (SC) lateral spin-valve devices. The local MR as a function of the bias voltage applied between two FM/SC contacts shows nonlinear variation, including sign inversion in high bias-voltage conditions. The inverse local MR can be observed up to room temperature, while conventional positive local MR disappears at around 225 K. To consider the origin of the large inverse MR effect, the influence of the nonlinear spin-detection efficiency at a biased FM/SC contact and the spin-drift effect in the SC channel are discussed.

引用

页数：5

共 38 条

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