Deposition of tantalum oxide thin film by laser ablation

Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAC pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 mum thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as delta Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.