Electric field assisted reemission of positrons from silicon carbide

被引：4
|
作者：
Weber, MH [1 ]
Fischer, CG
Sato, K
Lynn, KG
机构：
[1] Washington State Univ, Dept Phys, Pullman, WA USA
[2] Washington State Univ, Ctr Mat Res, Pullman, WA USA
来源：
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS | 2004年 / 445-6卷
关键词：
contact-free; field-assisted moderator; moderator; silicon carbide;
D O I：
10.4028/www.scientific.net/MSF.445-446.416
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron reemission properties of SiC were studied. Promising electric field assisted reemission results were observed with one sample. Without an applied field the diffusion length is 246+/-2 nm with y(o) = 21+/-0.5% reemission at 1 keV incident energy. The reemission fraction increased to as much as 42.3+/-0.6% and 14.4+/-0.5% for incident positrons of I and 20 keV respectively after the application of an electric field. A field-assisted diffusion length of 1.91+/-0.14 mum and a branching ratio of y(o)=28.8+/-0.1% were extracted. These values lead to a reflection-mode moderator efficiency comparable to that of tungsten single crystal.
引用
收藏
页码：416 / 418
页数：3
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