40Gbit/s GaAs P-HEMT driver module for optical communications

被引：7
|
作者：
Thiam, A [1 ]
Legros, EA [1 ]
Vuye, S [1 ]
Andre, P [1 ]
Wawrzynkowski, E [1 ]
Joly, C [1 ]
机构：
[1] France Telecom, CNET, OPTO, Groupement Interet Econ, F-91460 Marcoussis, France
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 23期
关键词：
D O I：
10.1049/el:19981550
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 40Gbit/s driver module incorporating a set of two original double-distributed amplifiers, based on 0.15 mu m GaAs P-HEMT (high electron mobility transistor) technology, has been designed and realised. This module provides a state-of-the-art output driving voltage of near 3Vpp, into a 50 Omega load, and an 18dB gain over a DC to 41.5GHz bandwidth; it is able to drive a high speed electroabsorption modulator.
引用
收藏
页码：2232 / 2234
页数：3
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