High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment (vol 100, 202106, 2012)

被引：0
|
作者：
Nayak, Pradipta K. [1 ]
Hedhili, M. N. [2 ]
Cha, Dongkyu [2 ]
Alshareef, H. N. [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Thuwal 239556900, Saudi Arabia
[2] King Abdullah Univ Sci & Technol, Imaging & Characterizat Lab, Thuwal 239556900, Saudi Arabia
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 24期
关键词：
D O I：
10.1063/1.4902402
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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