Electron tunneling in ZnS:Mn thin-film emitters

Experimental kinetics of the current and charge transferred via a phosphor layer in ZnS:Mn electroluminescent thin-film emitters have been numerically simulated using a model time dependence of the current of electrons tunneling from the surface states at the insulator-semiconductor interface. It is found that, as the field strength increases, the depth of the surface states changes from similar to0.6 to 1.3 eV, the electron tunneling probability increases from 10-15 to 300- 400 s(-1), and the potential barrier width decreases from 9 to 5.7 nm. (C) 2005 Pleiades Publishing, Inc.