Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor

被引：15
|
作者：
Meng, Xiankuan [1 ]
Deng, Hongmei [2 ]
Zhang, Qiao [1 ]
Sun, Lin [1 ]
Yang, Pingxiong [1 ]
Chu, Junhao [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
[2] Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China
来源：
MATERIALS LETTERS | 2017年 / 186卷
基金：
中国国家自然科学基金;
关键词：
Cu2FeSnS4; Sputtering; Thin films; Sulfurization; ELECTRICAL-PROPERTIES;
D O I：
10.1016/j.matlet.2016.10.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 mu m.
引用
收藏
页码：138 / 141
页数：4
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