Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

被引：0

作者：

Yan, BP ^{[1
]}

Wang, H ^{[1
]}

Ng, GI ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1336551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole-initiated impact ionization multiplication factor M-p-1 and the ionization coefficient alpha (p) in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (HBTs) are presented. A large discrepancy is observed at low electric field when the measured data from the p-n-p HBTs are compared with those given from avalanche photodiode. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor M-p-1. We believe that the hole ionization coefficient in p-n-p HBTs where significant dead space effects occur in the collector space charge region. (C) 2000 American Institute of Physics. [S0003- 6951(01)04001-3].

引用

页码：4217 / 4219

页数：3

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