Band-gap states and ferroelectric restoration in strontium bismuth tantalate

被引:6
|
作者
Li, B [1 ]
Koch, F
Chu, L
机构
[1] Tech Univ Munich, Dept Phys E16, D-85748 Garching, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85747 Garching, Germany
关键词
D O I
10.1063/1.1347011
中图分类号
O59 [应用物理学];
学科分类号
摘要
By means of photoluminescence (PL) and sub-band-gap (sub-E-g) optical illumination, the degradation and restoration of ferroelectric properties in strontium bismuth tantalate thin films have been investigated, and the existence of band-gap states is demonstrated. It is shown that the suppression and recovery of ferroelectricity are closely correlated with the change of PL intensity, since both switchable polarization and PL are related to Ta5+ ions in the TaO6 octahedron. Furthermore, the electric-field-induced restoration increases dramatically by the aid of sub-band-gap light (2.5 eV less than or equal toh nu less than or equal toE(g)) illumination absorbed in band-gap states. (C) 2001 American Institute of Physics.
引用
收藏
页码:1107 / 1109
页数:3
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