A Broadband Switch-Less Bi-Directional Amplifier with Negative-Group-Delay Matching Circuits

被引:13
|
作者
Meng, Yuwei [1 ]
Wang, Zhongbao [1 ]
Fang, Shaojun [1 ]
Shao, Te [1 ]
Liu, Hongmei [1 ]
机构
[1] Dalian Maritime Univ, Sch Informat Sci & Technol, Dalian 116026, Liaoning, Peoples R China
来源
ELECTRONICS | 2018年 / 7卷 / 09期
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
negative group delay; non-Foster circuit; negative capacitance; bi-directional low noise amplifier; MICROWAVE CIRCUIT; SIGE BICMOS; NETWORK;
D O I
10.3390/electronics7090158
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A broadband switch-less bi-directional low noise amplifier based on negative group delay (NGD) matching circuits with a non-Foster characteristic is proposed. To validate the feasibility, two circuits were designed and compared, which are matched by NGD circuits and traditional lumped elements respectively. The structure proposed in this paper has a measured relative bandwidth (RBW) of 32.6% rather than 5.1% for the traditional one. From 797 MHz to 1095 MHz, the input and output return losses (RL) are more than 10 dB with a noise factor (NF) of about 3.5 dB and peak gain of 12.2 dB. Meanwhile, the reverse isolation and stability factor (SF) are greater than 20 dB and 1, respectively. The group delay (GD) value is 0.5 ns +/- 0.25 ns in the operating frequency band, which is much flatter and lower compared to that of the traditional one.
引用
收藏
页数:11
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