Effect of laser irradiation on electrical and gas sensing properties of reduced graphene oxide-graphene oxide heterostructure films

被引:16
|
作者
Kavinkumar, Thangavelu [1 ]
Shobin, Loukkose Rosemary [1 ]
Manivannan, Sellaperumal [1 ]
机构
[1] Natl Inst Technol, Dept Phys, Carbon Nanomat Lab, Tiruchirappalli 620015, Tamil Nadu, India
关键词
Dielectric behaviour; Conductive layers; Microcapacitor networks; Ammonia vapor; Heterostructure sensor; GRAPHITE; REDUCTION; PHOTOREDUCTION; NETWORKS; BEHAVIOR; SENSORS;
D O I
10.1016/j.jallcom.2018.12.376
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene oxide (GO) and reduced graphene oxide (rGO) are important materials used for various applications like sensors, photo catalysis and supercapacitor. Herein, we present a facile approach for fabricating rGO-GO heterostructure freestanding films for gas sensing and capacitor applications. Taking advantage simple and fast laser irradiation reduction process and oxygen functional groups in the rGO-GO heterostructure, we fabricated free-standing and flexible room temperature ammonia sensors with a high response (18%) and wide sensing range (50-800 ppm). Interestingly, these heterostructures show high epsilon' (1333) in the capacitor configuration which is 24 higher than the insulating GO. Our results establish that the proposed method is a promising strategy to improve graphene-based devices like gas sensors and capacitors and also provide new insights of ultrafast laser processing of heterostructure. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码:301 / 312
页数:12
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