Hall resistance anomaly at low temperature in AlGaN/GaN heterostructure

被引：0

作者：

Tsubaki, K ^{[1
]}

Maeda, N ^{[1
]}

Saitoh, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS | 2003年

关键词：

D O I：

10.1142/9789812705556_0019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

AlGaN/GaN heterostructure devices have been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of 2DEG in AlGaN/GaN heterostructures have been discussed. In this paper, we measured the Hall resistance of AlGaN/GaN 2DEG at low temperature. Above 0.6 K, the classical Hall effect is observed near zero magnetic field. Below 0.6 K, the Hall coefficients become smaller with decreasing the temperature at small magnetic field.

引用

页码：111 / 116

页数：6

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